BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//CERN//INDICO//EN
BEGIN:VEVENT
SUMMARY:Creating a parameterized model of a CMOS transistor with a gate of
  enclosed layuot.
DTSTART;VALUE=DATE-TIME:20151010T063000Z
DTEND;VALUE=DATE-TIME:20151010T070000Z
DTSTAMP;VALUE=DATE-TIME:20260914T205708Z
UID:indico-contribution-383@cern.ch
DESCRIPTION:Speakers: Pavel Ivanov (NRNU MEPhI)\, Sergey Vinogradov (NRNU 
 "MEPhI")\nWe consider the method of creating a parametrized Space model of
  an N-channel transistor with a gate of enclosed layuot. This model provid
 e an increased radiation tolerance. Formulas and examples of engineering c
 alculation for the operation of models in the computer-aided Design enviro
 nment of Cadence Vitruoso. Calculations are made for the CMOS technology w
 ith 180 nm design rules  of the UMC.\n\nhttps://indico.particle.mephi.ru/e
 vent/2/contributions/383/
LOCATION:Milan Hotel 4*
URL:https://indico.particle.mephi.ru/event/2/contributions/383/
END:VEVENT
END:VCALENDAR