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SUMMARY:The read-out ASIC for silicon drift detectors
DTSTART;VALUE=DATE-TIME:20151010T063000Z
DTEND;VALUE=DATE-TIME:20151010T070000Z
DTSTAMP;VALUE=DATE-TIME:20260809T191321Z
UID:indico-contribution-396@cern.ch
DESCRIPTION:Speakers: Vitaly Shumikhin (NRNU MEPhI)\nThe paper describes t
 he read-out ASIC for silicon X-ray drift detectors. The ASIC has been desi
 gned in CMOS 0.35 um technology and contained two read-out channels. Each 
 channel include preamplifier and shaper. Preamplifiers optimized for opera
 tion with detectors\, having capacitances of 100 fF. The 6-th order shaper
  have a controllable time constants (0.5 – 8 us).\n\nhttps://indico.part
 icle.mephi.ru/event/2/contributions/396/
LOCATION:Milan Hotel 4*
URL:https://indico.particle.mephi.ru/event/2/contributions/396/
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