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SUMMARY:Modeling of the bipolar transistor under X-Ray pulse ionizing radi
 ation
DTSTART;VALUE=DATE-TIME:20161013T121500Z
DTEND;VALUE=DATE-TIME:20161013T124500Z
DTSTAMP;VALUE=DATE-TIME:20260720T225458Z
UID:indico-contribution-673@cern.ch
DESCRIPTION:Speakers: Alexandra Antonova (National Research Nuclear Univer
 sity MEPhI)\nThis document describes a 2D model of the bipolar transistor 
 2T312 under X-ray pulse ionizing radiation. Both the Finite Element Discre
 tization and Semiconductor module of Comsol 5.1 are used. We present an an
 alysis of energy deposition in this device under X-ray and the results of 
 transient ionizing current response for some different carrier densities.\
 n\nhttps://indico.particle.mephi.ru/event/4/contributions/673/
LOCATION:Milan Hotel Hall of the 2nd floor
URL:https://indico.particle.mephi.ru/event/4/contributions/673/
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