BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//CERN//INDICO//EN
BEGIN:VEVENT
SUMMARY:Simulation and investigation of SiPM's surface leakage currents ca
 used by radiation damage
DTSTART;VALUE=DATE-TIME:20161014T063000Z
DTEND;VALUE=DATE-TIME:20161014T070000Z
DTSTAMP;VALUE=DATE-TIME:20260720T123932Z
UID:indico-contribution-721@cern.ch
DESCRIPTION:Speakers: Pavel Parygin (NRNU MEPhI)\nSilicon photomultipliers
  (SiPM) are very promising semiconductor single photon sensitive devices w
 ith high gain. One of the challenge of use these detectors in radiation en
 vironment such as high energy physics experiments is a radiation hardness.
 \n\nExperimental samples were produced and then irradiated with different 
 doses of X-rays with energy E≈12 keV. Simulation of these SiPMs was perf
 ormed using Synopsys TCAD software. Current-voltage characteristics were m
 easured and simulated for the low voltages. Correlation between different 
 parts of SiPM structure and current-voltage characteristics will be presen
 ted.\n\nhttps://indico.particle.mephi.ru/event/4/contributions/721/
LOCATION:Milan Hotel Hall of the 2nd floor
URL:https://indico.particle.mephi.ru/event/4/contributions/721/
END:VEVENT
END:VCALENDAR