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SUMMARY:The charge losses in SiC and Si detectors at the registration of h
 eavy ions
DTSTART;VALUE=DATE-TIME:20241024T133000Z
DTEND;VALUE=DATE-TIME:20241024T140000Z
DTSTAMP;VALUE=DATE-TIME:20260517T204856Z
UID:indico-contribution-4246@cern.ch
DESCRIPTION:Speakers: Yuri  Gurov  (Joint Institute for Nuclear Research)\
 nThe results of measurements of charge losses at detection of heavy xenon 
 ions with detectors based on boron carbide (SiC) and silicon (Si) are pres
 ented. It is shown that the measured values of charge losses (amplitude de
 fect) from the true energy of Xe ions for Si and SiC detectors are 20 and 
 40%\, respectively. These results are due to the significantly shorter lif
 etime of charge carriers created by the particle in SiC compared to silico
 n. When using SiC detectors\, this leads to a significantly greater recomb
 ination of electron-hole pairs in the region of the so-called “plasma fi
 lament”\, which is formed in the ion track.\n\nhttps://indico.particle.m
 ephi.ru/event/436/contributions/4246/
LOCATION:Hotel Intourist Kolomenskoye 4*
URL:https://indico.particle.mephi.ru/event/436/contributions/4246/
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