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SUMMARY:Charge-exchange straggling and correlated A–E reconstruction for
  heavy-ion isotope identification in silicon detectors
DTSTART;VALUE=DATE-TIME:20261030T161500Z
DTEND;VALUE=DATE-TIME:20261030T163000Z
DTSTAMP;VALUE=DATE-TIME:20261019T182426Z
UID:indico-contribution-6376@cern.ch
DESCRIPTION:Speakers: Andrei Azhakin (Faculty of Physics\, Lomonosov Mosco
 w State University)\nIsotope identification in multilayer silicon detector
 s requires joint reconstruction of mass number A and energy E. Different A
 –E pairs may yield nearly identical mean profiles\, while deposited-ener
 gy fluctuations limit isotope separation. For partially stripped ions\, st
 ochastic electron capture and loss alter the charge state and add charge-e
 xchange fluctuations\, requiring explicit modeling.\n\nWe developed a Gean
 t4 framework combining GLOBAL capture/loss cross sections\, Mott-corrected
  δ-electron production\, and secondary-electron transport in general geom
 etries. To our knowledge\, no existing code provides this combination at t
 he level of detector energy deposition. MOCADI models charge-state evoluti
 on and projectile energy loss in beam lines\, but not deposited energy. We
  also developed an N-dimensional likelihood reconstruction of A and E usin
 g total deposition and correlated layer profiles. Beyond xenon\, simulatio
 ns predict non-Gaussian\, sometimes multi-peaked ΔE distributions in thin
  silicon\, where charge-exchange mean free paths can match typical 300–1
 000 μm layer thicknesses while ions remain partially stripped.\n\nhttps:/
 /indico.particle.mephi.ru/event/626/contributions/6376/
LOCATION:Sevastopol Hotel
URL:https://indico.particle.mephi.ru/event/626/contributions/6376/
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