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SUMMARY:Radiation resistance of SiC and Si detectors after irradiation wit
 h alpha particles
DTSTART;VALUE=DATE-TIME:20261027T162500Z
DTEND;VALUE=DATE-TIME:20261027T163000Z
DTSTAMP;VALUE=DATE-TIME:20261019T190723Z
UID:indico-contribution-6409@cern.ch
DESCRIPTION:Speakers: Sergey Evseev (JINR)\nThe results of research of sem
 iconductor detectors made of silicon carbide (SiC-SCD) [1-3] and silicon (
 Si-SCD) are presented. The irradiation was carried out using a standard sp
 ectrometric α‑source 226‑Ra with energies E = 4.8\; 5.5\; 6.0\; 7.7 M
 eV. The thickness of the sensitive layer of the SiC detectors of n‑type 
 was 25 μm and 50 μm\, and the diameter of the working area was 3.0 mm. T
 he initial energy resolution of the detectors was 25 keV. The Si detectors
  were manufactured using planar technology from n‑type silicon with a wo
 rking area of 7 mm^2 and a sensitive thickness of 100 μm. The radiation h
 ardness of SiC and Si detectors was studied before and after irradiation w
 ith alpha particles at integral fluxes up to ~ 2×10^11 α/cm^2. It was sh
 own that degradation was ob-served after irradiation: the peaks from alpha
  particles shifted towards the lower channels and be-came wider. It was fo
 und that as the radiation dose increased\, the energy resolution deteriora
 ted by more than an order of magnitude for SiC‑SCD 50 μm\, by a facto
 r of 4 for SiC 25 μm\, and by more than a factor of 2 for Si‑SCD. At 
 the same time\, the charge collection efficiency (CCE) decreased from 100%
  to 80% (operating voltage 300 V) for SiC‑SCD 50 μm\, from 100% to 90% 
 (operating voltage 200 V) for SiC‑SCD 25 μm\, and from 100% to 95% (ope
 rating voltage 100 V) for Si‑SCD at the maximum irradiation dose.\n\n\n1
 . S.A. Evseev et al. // Physics of Atomic Nuclei. 2023. V. 86\, No. 5\, pp
 . 841–844.\n2. Yu.B. Gurov et al. // Instrum. Exp. Tech. 2024\, V. 67\, 
 No. 6\, pp. 1095–1101.\n3. S.A. Evseev et al. // Physics of Atomic Nucle
 i. 2025. V. 88\, No. 3\, pp. 489–493.\n\nhttps://indico.particle.mephi.r
 u/event/626/contributions/6409/
LOCATION:Sevastopol hotel Conference Hall 1
URL:https://indico.particle.mephi.ru/event/626/contributions/6409/
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