Speaker
Alexandra Antonova
(National Research Nuclear University MEPhI)
Description
This document describes a 2D model of the bipolar transistor 2T312 under X-ray pulse ionizing radiation. Both the Finite Element Discretization and Semiconductor module of Comsol 5.1 are used. We present an analysis of energy deposition in this device under X-ray and the results of transient ionizing current response for some different carrier densities.
Primary authors
Alexandra Antonova
(National Research Nuclear University MEPhI)
Prof.
Petr Skorobogatov
(National Research Nuclear University MEPhI)
