Speaker
Mr.
Pavel Parygin
(NRNU MEPhI)
Description
Silicon photomultipliers (SiPM) are very promising semiconductor photon sensitive devices with high gain. However, the possibility of using SiPMs in some areas is limited by radiation tolerance.
Synopsys TCAD software allows simulating of microelectronic devices and their physical
characteristics.
Simulating of manufacturing technology of SiPMs has been made. Experimental samples
were produced and then irradiated with different doses of X-rays with energy E≈12 keV. For
the investigation of effects of radiation IV curves of devices were measured before and after irradiation and compared with results obtained from simulation.
Work has been partially supported by Megagrant 2013 program of Russia, agreement N14.A12.31.0006 from 24.06.2013.
| Presentation type | Section talk (10+5 min) |
|---|
Primary authors
Co-authors
Mrs.
Erika Garutti
(Hamburg University)
Mr.
Joern Schwandt
(University of Hamburg)
