Speaker
Mr.
Anton Balbekov
(SRISA)
Description
This work considers the technique for modeling of multiple errors caused by charged particles in sub-100 nm devices. This technique estimates the Soft Error Rate taking into account layout of integrated circuit. Comparison of simulated data with data from experiments on testing facilities is provided.
Primary author
Mr.
Anton Balbekov
(SRISA)
Co-authors
Dr.
Maxim Gorbunov
(SRISA)
Dr.
Sergey Bobkov
(SRISA, NRNU MEPhI)