Speaker
Dr.
Yuri Gurov
(Joint Institute for Nuclear Research)
Description
The results of measurements of charge losses at detection of heavy xenon ions with detectors based on boron carbide (SiC) and silicon (Si) are presented. It is shown that the measured values of charge losses (amplitude defect) from the true energy of Xe ions for Si and SiC detectors are 20 and 40%, respectively. These results are due to the significantly shorter lifetime of charge carriers created by the particle in SiC compared to silicon. When using SiC detectors, this leads to a significantly greater recombination of electron-hole pairs in the region of the so-called “plasma filament”, which is formed in the ion track.
Primary authors
Dr.
Yuri Gurov
(Joint Institute for Nuclear Research)
Mr.
Sergey Evseev
(Joint Institute for Nuclear Research)
Boris Chernyshev
(National Research Nuclear University “MEPhI”)
Mr.
Maksim Dovbnenko
(Joint Institute for Nuclear Research)
Dr.
Sergey Rozov
(Joint Institute for Nuclear Research)
Dr.
Slava Sandukovsky
(Joint Institute for Nuclear Research)
