Speaker
Mr.
Vitaly Shumikhin
(NRNU MEPhI)
Description
The paper describes the read-out ASIC for silicon X-ray drift detectors. The ASIC has been designed in CMOS 0.35 um technology and contained two read-out channels. Each channel include preamplifier and shaper. Preamplifiers optimized for operation with detectors, having capacitances of 100 fF. The 6-th order shaper have a controllable time constants (0.5 – 8 us).
| Presentation type | Poster |
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Primary author
Mr.
Vitaly Shumikhin
(NRNU MEPhI)
Co-authors
Mr.
Aleksei Rotin
(Space Research Institute of the Russian Academy of Sciences)
Mr.
Alexander Krivchenko
(Space Research Institute of the Russian Academy of Sciences)
Dr.
Eduard Atkin
(National Research Nuclear University MEPhI)
Mr.
Evgeny Malankin
(NRNU MEPhI)
Mr.
Vasily Levin
(Space Research Institute of the Russian Academy of Sciences)
