Speakers
Mr.
Pavel Ivanov
(NRNU MEPhI)
Mr.
Sergey Vinogradov
(NRNU "MEPhI")
Description
We consider the method of creating a parametrized Space model of an N-channel transistor with a gate of enclosed layuot. This model provide an increased radiation tolerance. Formulas and examples of engineering calculation for the operation of models in the computer-aided Design environment of Cadence Vitruoso. Calculations are made for the CMOS technology with 180 nm design rules of the UMC.
| Presentation type | Poster |
|---|
Primary author
Mr.
Sergey Vinogradov
(NRNU "MEPhI")
Co-authors
Dr.
Eduard Atkin
(National Research Nuclear University MEPhI)
Mr.
Pavel Ivanov
(NRNU MEPhI)
