Speaker
Uladzimir KRUCHONAK
(JINR)
Description
Investigation of the semiconductor detectors properties under neutron irradiation is very important for their practical application. High-resistivity gallium arsenide detectors (GaAs:Cr) were irradiated at the reactor IBR-2 with various fast neutron fluences in range from 4×1011 см-2 to 5×1017 cm-2. The charge collection efficiency and the current-voltage characteristics of irradiated detectors were measured, and their degradation after neutron irradiation was compared with the results obtained by irradiation with 20 MeV electrons
Primary authors
Uladzimir KRUCHONAK
(JINR)
Said Abou El-Azm
(JINR)
Dr.
Georgy Chelkov
(Joint Intitute for Nuclear Research)
Mikhail Gostkin
(JINR)
Alexey Guskov
(JINR)
Anastasiya Sheremetyeva
(JINR)
Nikolai Zamyatin
(JINR)
Alexey Zhemchugov
(JINR)
